BF510,215 datasheet

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• Маркировка
  BF510,215
• Производитель
  NXP Semiconductors
• Описание
  NXP Semiconductors BF510,215 Channel Type: N Configuration: Single Continuous Drain Current: 30 mA Current - Test: 5mA Current Rating: 30mA Drain Current (idss At Vgs=0): 3 mA Drain Current (max): 30mA Drain Source Voltage Vds: 20 V Drain-gate Voltage (max): 20V Drain-source Volt (max): 20V Forward Transconductance Gfs (max / Min): 0.0001 S Frequency: 100MHz Gain: - Gate-source Cutoff Voltage: 0.8 V ID_COMPONENTS: 1949136 Lead Free Status / Rohs Status: Compliant Maximum Drain Gate Voltage: 20 V Maximum Operating Temperature: + 150 C Mounting: Surface Mount Mounting Style: SMD/SMT Noise Figure: 1.5dB Operating Temperature (max): 150C Operating Temperature Classification: Military Package / Case: SST3 (SOT-23-3) Pin Count: 3 Power - Output: - Power Dissipation: 250 mW Series: - Transistor Polarity: N-Channel Transistor Type: N-Channel JFET Voltage - Test: 10V Other Names: 933505270215::BF510 T/R::BF510 T/R
• Количество страниц
  9 шт.
• Формат
  PDF

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• Размер файла
  78,38 KB

BF510,215 datasheet скачать

BF510,215 datasheet